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FMG1G400US60L
IGBT
FMG1G400US60L
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required.
Features
* * * * * * Short Circuit Rated Time; 10us @ TC =100C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 400A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204
Package Code : 7PM-IA
E1/C2
Application
* * * * * AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS
C1 E2
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TSC TJ TSTG VISO Mounting Torque
TC = 25C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminal Screw : M6 Mounting Screw : M6
@ TC = 80C @ TC = 80C @ TC = 25C @ TC = 100C
FMG1G400US60L 600 20 400 800 400 800 1136 10 -40 to +150 -40 to +125 2500 4.0 4.0
Units V V A A A A W us C C V N.m N.m
@ AC 1minute
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
(c)2004 Fairchild Semiconductor Corporation
FMG1G400US60L Rev. A
FMG1G400US60L
Electrical Characteristics of IGBT
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 400mA, VCE = VGE IC = 400A, VGE = 15V 5.0 -6.5 2.1 8.5 2.7 V V
Switching Characteristics
td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, IC = 400A, RG = 2, VGE = 15V, Inductive Load, TC = 25C ------------10 ---160 220 230 150 9.5 21 320 240 290 230 11 26 -1200 310 490 ---250 ------------ns ns ns ns mJ mJ ns ns ns ns mJ mJ us nC nC nC
VCC = 300 V, IC = 400A, RG = 2, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, VGE = 15V 100C
@ TC =
VCE = 300 V, IC =400A, VGE = 15V
Electrical Characteristics of DIODE
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
TC = 25C unless otherwise noted
Test Conditions TC = 25C IF = 400A TC = 100C TC = 25C TC = 100C IF = 400A di / dt = 800 A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.9 1.8 90 130 35 76 1580 4940
Max. 2.8 -130 -46 -3000 --
Units V ns A nC
Thermal Characteristics
Symbol RJC RJC RJC Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.03 360 Max. 0.11 0.18 --Units C/W C/W C/W g
(c)2004 Fairchild Semiconductor Corporation
FMG1G400US60L Rev. A
FMG1G400US60L
600 500
Common Emitter VGE = 15V TC = 25 TC = 125
600 500
Common Emitter TC = 25
20V 15V
12V V
GE
= 10V
[A]
[A] C o ll e c t o r C u r r e n t , I
C
400 300 200 100 0 1 10
CE
400 300 200 100 0 0 1 2 3
CE
C o ll e c t o r C u r r e n t , I
C
4
C o ll e c t o r - E m it t e r V o lt a g e , V
[V]
C o ll e c t o r - E m it t e r V o lt a g e , V
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
600 500
Common Emitter TC = 125
20V 15V
12V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 25 50 75
C
Common Emitter VGE = 15V
[A]
300 200 100 0 0 1 2 3
CE
C o ll e c t o r - E m it t e r V o lt a g e , V
400
V
GE
= 10V
CE
[V]
600A
C o ll e c t o r C u r r e n t , I
C
400A
200A
4
C o ll e c t o r - E m it t e r V o lt a g e , V
[V]
100 []
125
C ase T e m p erature, T
Fig 3. Typical Saturation Voltage Characteristics
Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level
10000
Common Emitter VCC = 300V, VGE = 15V IC = 400A TC = 25 TC = 125 -----Common Emitter VCC = 300V, VGE = 15V IC = 400A TC = 25 TC = 125 ------
1000
S w it c h i n g T i m e [ n s ]
S w it c h i n g T i m e [ n s ]
Ton Tr
T o ff
1000
Tf 100
100
2
4
6
8
10
12
14 2
4
6
8
10
12
14
G ate R e sista n c e, R g [
]
G ate R e sista n c e, R g [
]
Fig 5. Turn-On Characteristics vs. Gate Resistance
(c)2004 Fairchild Semiconductor Corporation
Fig 6. Turn-Off Characteristics vs. Gate Resistance
FMG1G400US60L Rev. A
FMG1G400US60L
100
S w it c h i n g L o s s [ m J ]
E o ff
S w it c h i n g T i m e [ n s ]
Common Emitter VCC = 300V, VGE = 15V IC = 400A TC = 25 TC = 125 ------
1000
Common Emitter VGE = 15V, RG = 2 TC = 25 TC = 125 ------
Ton
10
Eon
Tr 100
2
4
6
8
10
12
14
280
320
360
C
400
G ate R e sista n c e, R g [
]
C o ll e c t o r C u r r e n t , I
[A]
Fig 7. Switching Loss vs. Gate Resistance
Fig 8. Turn-On Characteristics vs. Collector Current
S w it c h i n g T i m e [ n s ]
S w it c h i n g L o s s [ m J ]
1000
Common Emitter VGE = 15V, RG = 2 TC = 25 TC = 125 ------
100
Common Emitter VGE = 15V, RG = 2 TC = 25 TC = 125 ------
E o ff
T o ff
10
Eon
Tf 100
280
320
C
360
400
1 280 320 360
C
400
C o ll e c t o r C u r r e n t , I
[A]
C o ll e c t o r C u r r e n t , I
[A]
Fig 9. Turn-Off Characteristics vs. Collector Current
Fig 10. Switching Loss vs. Collector Current
15
Common Emitter IC = 400A VCC = 300V TC = 25 C
o
800
Common Cathode VGE = 0V TC = 25 TC = 125
[V]
12
G a t e - E m itt e r V o lt a g e , V
C u rr e n t, I
6
9
F
[A] F orw ard
600
GE
400
200
3
0 0 200 400 600
g
0
800
1000
1200
0
1
2
3
4
G ate C h arg e, Q
[nC]
F orw ard
V o lt a g e ,
V
F
[V]
Fig 11. Gate Charge Characteristics
(c)2004 Fairchild Semiconductor Corporation
Fig 12. Forward Characteristics (diode)
FMG1G400US60L Rev. A
FMG1G400US60L
P e a k R e v e r s e R e c o v e ry C u rr e n t, I [A] rr R evers e R e c o very Ti m e, T [x10ns]
100
Common Cathode di/dt = 800A/ TC = 25 TC = 100 Irr
rr
10
trr
0
50
100
150
200
250
F
300
350
400
450
F orw ard
C u rr e n t, I
[A]
Fig 13. Reverse Recovery Characteristics(diode)
(c)2004 Fairchild Semiconductor Corporation
FMG1G400US60L Rev. A
FMG1G400US60L
Package Dimension
7PM-IA
48.5 0.50 25.0 0.50 25.0 0.50
15.0 0.60 4- O6.5 0.30 Mounting-Hole
48.0 0.60
3-M6 93.0 0.50 108.0 0.50
8.05 0.50
3-22.0 0.50 3-14.0 0.50
2.80 -0.50*0.5t
O1.3
+0.00
27.0 0.60
62.0 0.60
32.0 0.50
30.15 -0.60
+0.20
5.95 0.60
Name Plate
:20~200um
CONVEX
22.45 -0.60
+0.20
59.8 0.50
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation FMG1G400US60L Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACT Quiet seriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FPSTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM EnSignaTM I2CTM ImpliedDisconnectTM FACTTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM
POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I7

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